Author Affiliations
Abstract
1 School of Optical and Electronic Information, National Engineering Laboratory for Next Generation Internet Access System, Huazhong University of Science and Technology, Wuhan 430074, China
2 Department of Electronics and Information Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
3 Enviromental Protection Science and Technology Co., Ltd., Wuhan 430070, China
In this Letter, an alternative solution is proposed and demonstrated for simultaneous measurement of axial strain and temperature. This sensor consists of two twisted points on a commercial single mode fiber introduced by flame-heated and rotation treatment. The fabrication process modifies the geometrical configuration and refractive index of the fiber. Different cladding modes are excited at the first twisted point, and part of them are coupled back to the fiber core at the second twisted point. Experimental results show distinct sensitivities of 34.9 pm/με with 49.23 pm/°C and 36.19 pm/με with 62.99 pm/°C for the two selected destructive interference wavelengths.
060.2370 Fiber optics sensors 060.2430 Fibers, single-mode Chinese Optics Letters
2018, 16(4): 040602
1 人工微结构与介观物理国家重点实验室, 北京大学物理学院, 北京 100871
2 中国科学院高能物理研究所, 北京 100039
3 北京大学现代光学研究所, 北京 100871
在(0001)蓝宝石衬底上分别用金属有机化学气相沉积技术外延生长了InGaN/GaN, InGaN/InGaN, InGaN/AlInGaN多量子阱激光器结构, 并分别制作了脊形波导GaN基激光器。 同步辐射X射线衍射, 电注入受激发射光谱测试及光功率-电流(L-I)测试证明, 相对于GaN垒材料, InGaN垒材料, AlInGaN四元合金垒材料更能改善多量子阱的晶体质量, 提高量子阱的量子效率及降低激光器阈值电流。 相关的机制为： 组分调节合适的四元合金垒层中Al的掺入使得量子阱势垒高度增加, 阱区收集载流子的能力增强； In的掺入能更多地补偿应力, 减少了由于缺陷和位错所产生的非辐射复合中心密度； In的掺入还减小了量子阱中应力引致的压电场, 电子空穴波函数空间交叠得以加强, 使得辐射复合增加。
GaN基激光器 多量子阱(MQWs) 垒材料 GaN-based LD Multi-quantum-well (MQW) AlInGaN AlInGaN Barrier material 光谱学与光谱分析
2009, 29(6): 1441
